Overall High-Performance Near-Infrared Photodetector Based on CVD-Grown MoTe2 and Graphene Vertical vdWs Heterostructure

Two-dimensional (2D) materials, such as graphene and transition metal dichalcogenides (TMDCs), are highly appealing in the fields of electronics, optoelectronics, energy, etc. Graphene, with high conductivity carrier mobility, is an excellent candidate for transparent electrodes. TMDCs have remarkably strong light absorption range visible to infrared wavelength. High-performance photodetectors expected achieve through combination TMDCs. Nowadays, near-infrared (NIR) play significant roles many areas. MoTe2 bandgap energy about 1.0 eV its bulk form a promising material cost-saving NIR photodetectors. Thus far, only few reported studies on built MoTe2/graphene heterostructures achieved responsivity short response time simultaneously one device. In this study, we fabricate graphene–MoTe2–graphene vertical van der Waals heterostructure devices chemical vapor deposition (CVD) growth, wet transfer method, dry etching technique. Under 1064 nm laser illumination, acquire 635 A/W 19 μs from as-fabricated Moreover, higher 1752 shorter 16 Al2O3-encapsulated Our research drives application 2D materials wavelength range.